The 33rd ICDS continues the tradition of exploring the fundamental role of point and extended defects in semiconductors, with a focus on their electrical, vibrational, optical, and magnetic characteristics. The conference will emphasize defect engineering and its impact on future technologies in areas like microelectronics, quantum computing, optoelectronics, and renewable energy. Novel approaches to characterizing and modeling defects will also be a key focus.

This year’s conference will showcase discussions on emerging materials such as wide-band-gap semiconductors, doped nanoparticles, and 2D materials, as well as exciting developments in “old” materials such as silicon.

Researchers and students are invited to present their findings and engage in in-depth discussions, fostering collaboration and advancing the global understanding of defects in semiconductors.